f red ultr afast s oft reco ver y diode, 16 a fe atures ultrafast recovery ultrasoft recovery v er y low i rrm v er y low q rr specified at operating conditi ons lead ( pb )- free designed and qualified for industrial level benef its reduced rfi and emi reduced power loss in diode and switch ing transistor higher frequency operation reduced snubbing reduced parts count descri p t ion pro duct sum mar y v r v f at 16 a at 25 o c 3.0 v i f ( av ) 16 a t rr ( typical ) 30 ns t j ( maximum ) 150 o c q rr ( typical ) 260 nc di ( rec ) m / dt ( typica l ) at 125 o c 76 a / s i rrm ( typical ) 5.8 a absol ute maxim um ra tings p arameter symbol test conditions v alu es 1200 16 a 190 64 maximum pow er dissipation 151 w 60 operating junct ion and storage tempe rature range t , t j stg - 55 to + 150 tc = 100 oc tc = 100 oc tc = 25 oc p d i f r m i f s m i f v r a v a i l a b l e r o h s * c o m p l i a n t h c a t h o d e t o a n o d e v o l t a g e m a x i m u m c o n t i n u o u s f o r w a r d c u r r e n t s i n g l e p u l s e f o r w a r d c u r r e n t m a x i m u m r e p e t i t i v e f o r w a r d c u r r e n t s e m i c o n d u c t o r n - h fa 1 6 t b 1 2 0 r o h s r o h s p a g e 1 o f 6 n e l l h i g h p o w e r p r o d u c t s 12 00 v c v units h fa 1 6 t b 1 2 0 i s a s t a t e o f t h e a r t u l t r a f a s t d i o d e . e m p l o y i n g t h e l a t e s t i n e p i t a x i a l c o n s t r u c t i o n a n d a d v a n c e d p r o c e s s i n g t e c h n i q u e s i t f e a t u r e s a s u p e r b c o m b i n a t i o n o f c h a r a c t e r i s t i c s w h i c h r e s u l t i n p e r f o r m a n c e w h i c h i s u n s u r p a s s e d b y a n y r e c t i f i e r p r e v i o u s l y a v a i l a b l e . w i t h b a s i c r a t i n g s o f 1 2 0 0 v a n d 1 6 a c o n t i n u o u s c u r r e n t , t h e h fa 1 6 t b 1 2 0 i s e s p e c i a l l y w e l l s u i t e d f o r u s e a s t h e c o m p a n i o n d i o d e f o r i g b t s a n d m o s f e t s . i n a d d i t i o n t o u l t r a f a s t r e c o v e r y t i m e , t h e f r e d p r o d u c t l i n e f e a t u r e s e x t r e m e l y l o w v a l u e s o f p e a k r e c o v e r y c u r r e n t ( i ) r r m a n d d o e s n o t e x h i b i t a n y t e n d e n c y t o s n a p - o f f d u r i n g t h e t p o r t i o n o f r e c o v e r y . t h e f r e d f e a t u r e s c o m b i n e b t o o f f e r d e s i g n e r s a r e c t i f i e r w i t h l o w e r n o i s e a n d s i g n i f i c a n t l y l o w e r s w i t c h i n g l o s s e s i n b o t h t h e d i o d e a n d t h e s w i t c h i n g t r a n s i s t o r. t h e s e f r e d a d v a n t a g e s c a n h e l p t o s i g n i f i c a n t l y r e d u c e s n u b b i n g , c o m p o n e n t c o u n t a n d h e a t s i n k s i z e s . t h e f r e d h fa 1 6 t b 1 2 0 i s i d e a l l y s u i t e d f o r a p p l i c a t i o n s i n p o w e r s u p p l i e s a n d c o n v e r s i o n s y s t e m s ( s u c h a s i n v e r t e r s ) , m o t o r d r i v e s , a n d m a n y o t h e r s i m i l a r a p p l i c a t i o n s w h e r e h i g h s p e e d , h i g h e f f i c i e n c y i s n e e d e d . r e c o v e r y w w w . n e l l s e m i . c o m anode 1 3 cathode cathode 2 t o - 2 2 0 a c
therma l - mec han ical spe cif ica tio ns p ar ameter symbol test conditions min . typ . max . units lead temperature t lead 0.063" from case (1.6 mm ) for 10 s - - 300 therma l resistance , junction to case r thjc - - 0.83 k / w therma l resistance , junction to ambie nt r thja typical socket mount - - 80 thermal resistance , case to heatsin k r thcs mounting surface , flat , smoo th and greased - 0.50 - weight - 2.0 - g - 0.07 - oz . mounting torque 6.0 (5.0) - 12 (10) kgf cm . . ( lbf in ) m a r k i n g d e v i c e c a s e s t y l e t o - 2 2 0 a c h f a 1 6 t b 1 2 0 o c s e m i c o n d u c t o r r o h s r o h s p a g e 2 o f 6 n e l l h i g h p o w e r p r o d u c t s n - h fa 1 6 t b 1 2 0 oc unless otherw ise spec ified ) = 25 p ar ameter symbol tes t condition s v - = 32 a i f - - a - - 1200 2.3 20 0.75 - 375 pf 27 e lectri cal specif ica t ions ( t j cathode to anode breakdown volta ge v br = 100 a i r maximum forwa rd voltage = 16 a i f = 16 a , t i = 125 oc f j maximum reverse leakage curre nt i rm junction capacitance 2.5 3.0 - - oc unless otherw ise spec ified ) = 25 p ar ameter symbol tes t conditions ns - - 90 164 dynami c recove r y charac terist ics perleg ( t j reverse recov ery time i f = 1.0 a, di /dt = -200 a/s, v =30 v, t = 25 c f r j 30 - a - 8.3 5.8 - nc - 680 260 - peak recovery c urrent reverse recov ery charge t rr t rr1 t rr2 i rrm1 i rrm2 q rr1 q rr2 t = 125 oc j t = 125 oc j t = 125 oc j t = 25 oc j t = 25 oc j t = 25 oc j i = 16 a f di /dt = -200 a/s f v = 200 v r - v fm c t v = 2 0 0 v r t = 1 2 5 c , v = v r a t e d j r r v = v r a t e d r r i = 0 . 5 a , i = 1 . 0 a , i = 2 5 0 m a ( r g # 1 c k t ) f r r r 28 - 3.0 units max . typ . min . units max . typ . min . a/ s - 76 120 - dl /dt2 (rec)m t = 125 oc j t = 25 oc j - - nh 8.0 series inductance l s 4 0 2 0 0 0 - - measured lead to lead 5 mm from pack age body dl /dt1 (rec)m 245 10 135 15 1838 675 2.8 3.5 35 peak rate of fall of recovery current during t b w w w . n e l l s e m i . c o m
fig .1 maximum forward voltage drop vs . instanta neous forward current fig. 2 typical reverse current vs . re verse voltage fig .3 typical junction c apacitance vs . reverse voltage fig .4 maximum the rmal impedance z thjc characteris tics 0.1 1 1 0 10 0 0 2 4 6 8 fm f or w ar d v ol t a ge dr op - v ( v ) 0.01 0.1 1 10 100 1000 0 200 400 600 800 100 0 120 0 a 1 10 100 1000 1 10 100 1000 10000 0 . 0 1 0 . 1 1 0 . 0 0 0 0 1 0 . 0 0 0 1 0 . 0 0 1 0 . 0 1 0 . 1 1 1 0 1 0 0 s i n g l e p u l s e ( t h e r m a l r e s i s t a n c e ) d = 0 . 5 0 d = 0 . 2 0 d = 0 . 1 0 d = 0 . 0 5 d = 0 . 0 2 d = 0 . 0 1 2 t 1 t p d m j n o t e s : 1 . d u t y f a c t o r d = t 1 / t 2 2 . p e a k t = p d m x z t h j c + t c s e m i c o n d u c t o r r o h s r o h s p a g e 3 o f 6 n e l l h i g h p o w e r p r o d u c t s n - h fa 1 6 t b 1 2 0 t = 1 2 5 c j t = 2 5 c j t = 1 5 0 c j t = 1 2 5 c j t = 2 5 c j t = 1 5 0 c j t = 2 5 c j w w w . n e l l s e m i . c o m
fig .5 typical reverse reco very time vs . di f / dt ( per leg ) fig .6 typical recove ry current vs . dl f / dt ( per leg ) fig .7 typical stored charge vs . di f / dt ( per leg ) fig .8 typical di ( rec ) m / dt vs . di f / dt ( per leg ) 2 0 7 0 12 0 17 0 22 0 27 0 t r r ( n s ) 0 5 1 0 1 5 2 0 2 5 3 0 0 20 0 40 0 60 0 80 0 10 00 12 00 14 00 16 00 1 0 1 0 0 1 0 0 0 1 0 0 0 0 s e m i c o n d u c t o r r o h s r o h s p a g e 4 o f 6 n e l l h i g h p o w e r p r o d u c t s n - h fa 1 6 t b 1 2 0 d l / d t ( a / s ) f d l / d t ( a / s ) f d l / d t ( a / s ) f d l / d t ( a / s ) f 1 0 0 1 0 0 0 1 0 0 1 0 0 0 1 0 0 1 0 0 0 1 0 0 1 0 0 0 v = 2 0 0 v r t = 1 2 5 c j t = 2 5 c j v = 2 0 0 v r t = 1 2 5 c j t = 2 5 c j v = 2 0 0 v r t = 1 2 5 c j t = 2 5 c j v = 2 0 0 v r t = 1 2 5 c j t = 2 5 c j l f = 1 6 a l f = 8 a l f = 1 6 a l f = 8 a l f = 1 6 a l f = 8 a l f = 1 6 a l f = 8 a d l / d t ( a / s ) ( r e c ) m w w w . n e l l s e m i . c o m
s e m i c o n d u c t o r r o h s r o h s p a g e 5 o f 6 n e l l h i g h p o w e r p r o d u c t s n - h fa 1 6 t b 1 2 0 fig .9 reverse recovery parameter test circuit fig. 10 reverse recovery waveform and definition s irfp 250 d . u . t . l = 70 h v r = 200 v 0.01 g d s di f / dt adjust q rr 0.5 i rrm di ( rec ) m / dt 0.75 i rrm i rrm t rr t b t a i f di f / dt 0 (1) (2) (3) (4) (5) (1) di / dt - rate of change of current f through zero crossing (2) i rrm - peak re v erse reco v er y current (3) t - re v erse reco v er y time measured rr from z ero crossing point of negativ e going i to point where a line passing f through 0.75 i rrm and 0.50 i rrm e xtrapolated to zero current . (4) q - area under cur v e defined by t rr rr i rrm x i rr rrm 2 q = rr (5) di / - dt peak rate of change of ( rec ) m current dur ing t b por tion of t rr and t w w w . n e l l s e m i . c o m
s e m i c o n d u c t o r r o h s r o h s p a g e 6 o f 6 n e l l h i g h p o w e r p r o d u c t s n - h fa 1 6 t b 1 2 0 or de ring in forma tion t abl e 1 - fred family 2 - nell semiconductors product 3 - current rating (16 = 16 a ) 4 - package : tb = t o -220 ac 5 - v oltage rating (120 = 1200 v ) device code t o -220 ac package outline anode cathode 0.404 [10.26] 0.393 [9.98] ?0.153 [3.89] ?0.149 [3.78] 0.1 14 [2.90] 0.102 [2.59] 0.508 [12.90] 0.492 [12.50] 0.154 [3.91] 0.134 [3.40] 0.531 [13.49] 0.515 [13.08] 0.100 [2.54] typ 0.204 [5.18] 0.196 [4.98] 0.057 [1.45] 0.047 [1.19] 0.034 [0.86] 0.030 [0.76] cathode 0.186 [4.72] 0.174 [4.42] 0.058 [1.47] 0.047 [1.19] 0.362 [9.19] 0.354 [8.99] 0.1 10 [2.79] 0.099 [2.51] 0.018 [0.46] 0.014 [0.36] 3 1 2 h fa 1 6 t b 1 2 0 n - 4 5 w w w . n e l l s e m i . c o m
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